Nanoelectronics 1

This course will discuss the physics of modern semiconductor electronic and photonic devices. The following topics will be covered; different classes of field-effect transistor (JFET, MESFET, MOSFET) and bipolar junction transistor (BJT); semiconductor heterostructures; carrier statistics and transport in 2 dimensions; modulation-doped field effect transistor (MODFET, HEMT) and heterostructure bipolar transistor (HBT); MOSFET scaling and advanced MOSFET structures; photodiodes, light-emitting diodes (LED) and laser diodes (LD), photovoltaic solar cells; integrated circuits

This course will provide the students with a basic understanding of the physics and working principles of the different classes of transistors encountered in modern micro-/nanoelectronics, as well as semiconductor-based photonic devices.

The course will provide students with the technical skills to compute the terminal currents and analyze amplification and switching of field-effect transistors and bipolar junction transistors (incl. circuit models for FETs) and discuss optical detectors, light emitters (LED,LD) and solar cells based on semiconductor (photo)diodes.

The course will provide the students with general skills regarding the use of mathematics, physics, and electronic circuitry for quantitative analysis of semiconductor system components and provide a strong basis for studies of more advanced electronic and photonic systems.

Auditorium lectures and exercises (problem sets)